ds(on) symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r q jl r q jl 130 maximum junction-to-lead c steady-state 40 50 thermal characteristics schottky maximum junction-to-ambient a t 10s r q ja 66 80 c/w maximum junction-to-ambient a steady-state 95 75 c/w maximum junction-to-ambient a steady-state 88 110 maximum junction-to-lead c steady-state 28 35 maximum junction-to-ambient a t 10s r q ja 51 parameter: thermal characteristics mosfet typ max w 1.1 0.62 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 1.7 0.96 a 1.2 pulsed forward current b 7 schottky reverse voltage 20 continuous forward current a i f 1.9 continuous drain current a i d -3.4 a -2.7 pulsed drain current b -15 drain-source voltage -20 gate-source voltage 8 absolute maximum ratings t a =25c unless otherwise noted 20v p-channel mosfet with schottky diode AON4703 parameter mosfet schottky features v ds (v) = -20v i d = -3.4a (v gs = -4.5v) r ds(on) < 90m w (v gs = -4.5v) r ds(on) < 120m w (v gs = -2.5v) r ds(on) < 160m w (v gs = -1.8v) schottky v ka (v) = 20v, i f = 1a, v f <0.5v @ 1a general description the AON4703 uses advanced trench technology to prov ide excellent r and low gate charge. a schottky diode is provided to facilitate the implementation of a bidi rectional blocking switch, or for buck converter applications a k g s a a d d k k 1 2 3 4 8 7 6 5 dfn 3x2 top view bottom pin 1 g d s www.freescale.net.cn 1/6
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.4 -0.65 -1 v i d(on) -15 a 51 90 t j =125c 64 135 65 120 m w 83 160 m w g fs 12 s v sd -0.7 -1 v i s -2 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23 w q g 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc schottky parameters v f 0.4 0.5 v 0.2 20 c t 44 pf t rr 11 14 ns q rr 2.5 nc turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.9 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3.4a gate source charge gate drain charge turn-on rise time m w v gs =-2.5v, i d =-2.5a i s =-1a,v gs =0v v ds =-5v, i d =-3.4a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v gs =-1.8v, i d =-1.5a i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-20v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-3.4a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-3.4a reverse transfer capacitance forward voltage drop i f =1a i rm maximum reverse leakage current v r =16v i f =-3.4a, di/dt=100a/ m s v gs =0v, v ds =-10v, f=1mhz schottky reverse recovery charge i f =1a, di/dt=100a/ m s junction capacitance v r =10v ma v r =16v, t j =125c schottky reverse recovery time i f =1a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a = 25 c. the value in any given application depends on the user's specif ic board design. b: repetitive rating, pulse width limited by junction t emperature. c. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. AON4703 www.freescale.net.cn 2/6
typical electrical and thermal characteristics 165 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.5v -2.0v -2.5v -4.5v -3.0v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 40 50 60 70 80 90 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =-2.5v v gs =-4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 0.9 1 1.1 1.2 1.3 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =-2.5v i d =-2.5a v gs =-1.8v i d =-1.5a v gs =-4.5v i d =-3.4a 20 60 100 140 180 0 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-3.4a 25 125 AON4703 www.freescale.net.cn 3/6
typical electrical and thermal characteristics 165 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance t on t p d d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s dc r ds(on) limited 10 m s t j(max) =150 c t a =25 c v ds =-10v i d =-3.4a single pulse t j(max) =150 c t a =25 c AON4703 www.freescale.net.cn 4/6
typical electrical and thermal characteristics: sch ottky 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f (amps) v f (volts) figure 12: schottky forward characteristics 0 20 40 60 80 100 0 5 10 15 20 capacitance (pf) v ka (volts) figure 13: schottky capacitance characteristics 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 0 25 50 75 100 125 150 leakage current (a) temperature (c) figure 15: schottky leakage current vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: schottky normalized maximum transient the rmal impedance 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 v f (volts) temperature (c) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =130 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =0.5a 25 v r =16v 125 t on t p d AON4703 www.freescale.net.cn 5/6
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AON4703 www.freescale.net.cn 6/6
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